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Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain

Wang, Changan and Zhang, Hongbin and Deepak, Kumar and Chen, Chao and Fouchet, Arnaud and Duan, Juanmei and Hilliard, Donovan and Kentsch, Ulrich and Chen, Deyang and Zeng, Min and Gao, Xingsen and Zeng, Yu-Jia and Helm, Manfred and Prellier, Wilfrid and Zhou, Shengqiang (2019):
Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain.
In: Physical Review Materials, 3 (11), American Physical Society (APS), p. 5001, e-ISSN 2475-9953,
DOI: 10.1103/PhysRevMaterials.3.115001,
[Article]

Item Type: Article
Erschienen: 2019
Creators: Wang, Changan and Zhang, Hongbin and Deepak, Kumar and Chen, Chao and Fouchet, Arnaud and Duan, Juanmei and Hilliard, Donovan and Kentsch, Ulrich and Chen, Deyang and Zeng, Min and Gao, Xingsen and Zeng, Yu-Jia and Helm, Manfred and Prellier, Wilfrid and Zhou, Shengqiang
Title: Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain
Language: English
Journal or Publication Title: Physical Review Materials
Volume: 3
Number: 11
Publisher: American Physical Society (APS)
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Theory of Magnetic Materials
Date Deposited: 30 Mar 2020 07:50
DOI: 10.1103/PhysRevMaterials.3.115001
Projects: Support by the Ion Beam Center at Helmholtz-Zentrum Dresden-Rossendorf is gratefully acknowledged., C.W. thanks China Scholarship Council (Grant No. 201606750007) for financial support., S.Z. acknowledges financial support from the German Research Foundation (Grant No. ZH 225/10-1)., his work was also supported by the Shenzhen Science and Technology Project under Grants No. JCYJ20170412105400428 and No. KQJSCX20170727101208249., D.C. acknowledges financial support from the National Natural Science Foundation of China (Grants No. 11704130 and No. U1832104).
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