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Deposition of diamond-like carbon films on insulating substrates by plasma source ion implantation

Hatada, R. and Flege, S. and Ensinger, W. and Baba, K. (2020):
Deposition of diamond-like carbon films on insulating substrates by plasma source ion implantation.
In: Surface and Coatings Technology, 385. Elsevier B.V., p. 125426, ISSN 02578972,
DOI: 10.1016/j.surfcoat.2020.125426,
[Online-Edition: https://doi.org/10.1016/j.surfcoat.2020.125426],
[Article]

Abstract

Plasma source ion implantation (PSII) is a technique that is suitable for implantation as well as film deposition. Since it involves a high voltage that is applied to the sample holder to attract ions from the plasma to the sample, an influence can be expected in case that either the whole substrate or a part of it is nonconductive. Diamond-like carbon (DLC) films were deposited by PSII, using C2H2 as precursor. The substrates were silicon samples that were placed on a large, horizontally oriented conductive sample holder in three different ways: 1) directly on the holder, 2) with an alumina block of 5 mm height between holder and sample, and 3) with an alumina block of 12 mm height between holder and sample. A high voltage (pulse or DC) was applied directly to the sample holder. The plasma was generated by this voltage or, in some experiments, by an additional RF signal, which was applied to a plate that was oriented parallel to the sample holder in a distance of 100 mm. The investigation of the effect of the presence of the insulating alumina block on the film properties focused on the deposition rate, the hydrogen content and film structure, the surface roughness, the hardness and the friction coefficient of the films.

Item Type: Article
Erschienen: 2020
Creators: Hatada, R. and Flege, S. and Ensinger, W. and Baba, K.
Title: Deposition of diamond-like carbon films on insulating substrates by plasma source ion implantation
Language: English
Abstract:

Plasma source ion implantation (PSII) is a technique that is suitable for implantation as well as film deposition. Since it involves a high voltage that is applied to the sample holder to attract ions from the plasma to the sample, an influence can be expected in case that either the whole substrate or a part of it is nonconductive. Diamond-like carbon (DLC) films were deposited by PSII, using C2H2 as precursor. The substrates were silicon samples that were placed on a large, horizontally oriented conductive sample holder in three different ways: 1) directly on the holder, 2) with an alumina block of 5 mm height between holder and sample, and 3) with an alumina block of 12 mm height between holder and sample. A high voltage (pulse or DC) was applied directly to the sample holder. The plasma was generated by this voltage or, in some experiments, by an additional RF signal, which was applied to a plate that was oriented parallel to the sample holder in a distance of 100 mm. The investigation of the effect of the presence of the insulating alumina block on the film properties focused on the deposition rate, the hydrogen content and film structure, the surface roughness, the hardness and the friction coefficient of the films.

Journal or Publication Title: Surface and Coatings Technology
Publisher: Elsevier B.V.
Uncontrolled Keywords: Plasma source ion implantation, Diamond-like carbon, Insulator, Plasma-enhanced chemical vapor deposition
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Material Analytics
Date Deposited: 14 Feb 2020 10:29
DOI: 10.1016/j.surfcoat.2020.125426
Official URL: https://doi.org/10.1016/j.surfcoat.2020.125426
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