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Deposition of diamond-like carbon films on insulating substrates by plasma source ion implantation

Hatada, R. ; Flege, S. ; Ensinger, W. ; Baba, K. (2020)
Deposition of diamond-like carbon films on insulating substrates by plasma source ion implantation.
In: Surface and Coatings Technology, 385
doi: 10.1016/j.surfcoat.2020.125426
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

Plasma source ion implantation (PSII) is a technique that is suitable for implantation as well as film deposition. Since it involves a high voltage that is applied to the sample holder to attract ions from the plasma to the sample, an influence can be expected in case that either the whole substrate or a part of it is nonconductive. Diamond-like carbon (DLC) films were deposited by PSII, using C2H2 as precursor. The substrates were silicon samples that were placed on a large, horizontally oriented conductive sample holder in three different ways: 1) directly on the holder, 2) with an alumina block of 5 mm height between holder and sample, and 3) with an alumina block of 12 mm height between holder and sample. A high voltage (pulse or DC) was applied directly to the sample holder. The plasma was generated by this voltage or, in some experiments, by an additional RF signal, which was applied to a plate that was oriented parallel to the sample holder in a distance of 100 mm. The investigation of the effect of the presence of the insulating alumina block on the film properties focused on the deposition rate, the hydrogen content and film structure, the surface roughness, the hardness and the friction coefficient of the films.

Typ des Eintrags: Artikel
Erschienen: 2020
Autor(en): Hatada, R. ; Flege, S. ; Ensinger, W. ; Baba, K.
Art des Eintrags: Bibliographie
Titel: Deposition of diamond-like carbon films on insulating substrates by plasma source ion implantation
Sprache: Englisch
Publikationsjahr: 15 März 2020
Verlag: Elsevier B.V.
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Surface and Coatings Technology
Jahrgang/Volume einer Zeitschrift: 385
DOI: 10.1016/j.surfcoat.2020.125426
URL / URN: https://doi.org/10.1016/j.surfcoat.2020.125426
Kurzbeschreibung (Abstract):

Plasma source ion implantation (PSII) is a technique that is suitable for implantation as well as film deposition. Since it involves a high voltage that is applied to the sample holder to attract ions from the plasma to the sample, an influence can be expected in case that either the whole substrate or a part of it is nonconductive. Diamond-like carbon (DLC) films were deposited by PSII, using C2H2 as precursor. The substrates were silicon samples that were placed on a large, horizontally oriented conductive sample holder in three different ways: 1) directly on the holder, 2) with an alumina block of 5 mm height between holder and sample, and 3) with an alumina block of 12 mm height between holder and sample. A high voltage (pulse or DC) was applied directly to the sample holder. The plasma was generated by this voltage or, in some experiments, by an additional RF signal, which was applied to a plate that was oriented parallel to the sample holder in a distance of 100 mm. The investigation of the effect of the presence of the insulating alumina block on the film properties focused on the deposition rate, the hydrogen content and film structure, the surface roughness, the hardness and the friction coefficient of the films.

Freie Schlagworte: Plasma source ion implantation, Diamond-like carbon, Insulator, Plasma-enhanced chemical vapor deposition
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik
Hinterlegungsdatum: 14 Feb 2020 10:29
Letzte Änderung: 14 Feb 2020 10:29
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