Stohr, Tobias ; Brötz, Joachim ; Oezaslan, Mehtap ; Münch, Falk (2020)
Dual metastability in electroless plating: Complex inertness enabling the deposition of composition‐tunable platinum copper alloy nanostructures.
In: Chemistry – A European Journal, 385
doi: 10.1002/chem.202000158
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Plasma source ion implantation (PSII) is a technique that is suitable for implantation as well as film deposition. Since it involves a high voltage that is applied to the sample holder to attract ions from the plasma to the sample, an influence can be expected in case that either the whole substrate or a part of it is nonconductive. Diamond-like carbon (DLC) films were deposited by PSII, using C2H2 as precursor. The substrates were silicon samples that were placed on a large, horizontally oriented conductive sample holder in three different ways: 1) directly on the holder, 2) with an alumina block of 5 mm height between holder and sample, and 3) with an alumina block of 12 mm height between holder and sample. A high voltage (pulse or DC) was applied directly to the sample holder. The plasma was generated by this voltage or, in some experiments, by an additional RF signal, which was applied to a plate that was oriented parallel to the sample holder in a distance of 100 mm. The investigation of the effect of the presence of the insulating alumina block on the film properties focused on the deposition rate, the hydrogen content and film structure, the surface roughness, the hardness and the friction coefficient of the films.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2020 |
| Autor(en): | Stohr, Tobias ; Brötz, Joachim ; Oezaslan, Mehtap ; Münch, Falk |
| Art des Eintrags: | Bibliographie |
| Titel: | Dual metastability in electroless plating: Complex inertness enabling the deposition of composition‐tunable platinum copper alloy nanostructures |
| Sprache: | Englisch |
| Publikationsjahr: | 16 Januar 2020 |
| Verlag: | Wiley-Blackwell |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Chemistry – A European Journal |
| Jahrgang/Volume einer Zeitschrift: | 385 |
| DOI: | 10.1002/chem.202000158 |
| URL / URN: | https://doi.org/10.1002/chem.202000158 |
| Kurzbeschreibung (Abstract): | Plasma source ion implantation (PSII) is a technique that is suitable for implantation as well as film deposition. Since it involves a high voltage that is applied to the sample holder to attract ions from the plasma to the sample, an influence can be expected in case that either the whole substrate or a part of it is nonconductive. Diamond-like carbon (DLC) films were deposited by PSII, using C2H2 as precursor. The substrates were silicon samples that were placed on a large, horizontally oriented conductive sample holder in three different ways: 1) directly on the holder, 2) with an alumina block of 5 mm height between holder and sample, and 3) with an alumina block of 12 mm height between holder and sample. A high voltage (pulse or DC) was applied directly to the sample holder. The plasma was generated by this voltage or, in some experiments, by an additional RF signal, which was applied to a plate that was oriented parallel to the sample holder in a distance of 100 mm. The investigation of the effect of the presence of the insulating alumina block on the film properties focused on the deposition rate, the hydrogen content and film structure, the surface roughness, the hardness and the friction coefficient of the films. |
| Freie Schlagworte: | Plasma source ion implantation, Diamond-like carbon, Insulator, Plasma-enhanced chemical vapor deposition |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik |
| Hinterlegungsdatum: | 14 Feb 2020 10:28 |
| Letzte Änderung: | 14 Feb 2020 10:28 |
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