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ZnO-based terahertz quantum cascade lasers

Sirkeli, V. P. ; Hartnagel, H. L. (2019)
ZnO-based terahertz quantum cascade lasers.
In: Opto-Electronics Review, 27 (2)
doi: 10.1016/j.opelre.2019.04.002
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

High-power terahertz sources operating at room-temperature are promising for many applications such as explosive materials detection, non-invasive medical imaging, and high speed telecommunication. Here we report the results of a simulation study, which shows the significantly improved performance of room-temperature terahertz quantum cascade lasers (THz QCLs) based on a ZnMgO/ZnO material system employing a 2-well design scheme with variable barrier heights and a delta-doped injector well. We found that by varying and optimizing constituent layer widths and doping level of the injector well, high power performance of THz QCLs can be achieved at room temperature: optical gain and radiation frequency is varied from 108 cm−1 @ 2.18 THz to 300 cm−1 @ 4.96 THz. These results show that among II–VI compounds the ZnMgO/ZnO material system is optimally suited for high-performance room-temperature THz QCLs.

Typ des Eintrags: Artikel
Erschienen: 2019
Autor(en): Sirkeli, V. P. ; Hartnagel, H. L.
Art des Eintrags: Bibliographie
Titel: ZnO-based terahertz quantum cascade lasers
Sprache: Englisch
Publikationsjahr: 2019
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Opto-Electronics Review
Jahrgang/Volume einer Zeitschrift: 27
(Heft-)Nummer: 2
DOI: 10.1016/j.opelre.2019.04.002
URL / URN: http://www.sciencedirect.com/science/article/pii/S1230340218...
Kurzbeschreibung (Abstract):

High-power terahertz sources operating at room-temperature are promising for many applications such as explosive materials detection, non-invasive medical imaging, and high speed telecommunication. Here we report the results of a simulation study, which shows the significantly improved performance of room-temperature terahertz quantum cascade lasers (THz QCLs) based on a ZnMgO/ZnO material system employing a 2-well design scheme with variable barrier heights and a delta-doped injector well. We found that by varying and optimizing constituent layer widths and doping level of the injector well, high power performance of THz QCLs can be achieved at room temperature: optical gain and radiation frequency is varied from 108 cm−1 @ 2.18 THz to 300 cm−1 @ 4.96 THz. These results show that among II–VI compounds the ZnMgO/ZnO material system is optimally suited for high-performance room-temperature THz QCLs.

Freie Schlagworte: ZnO, MgO, ZnMgO, Quantum well devices, Quantum cascade lasers, Terahertz radiation
Fachbereich(e)/-gebiet(e): 18 Fachbereich Elektrotechnik und Informationstechnik
18 Fachbereich Elektrotechnik und Informationstechnik > Mikrowellenelektronik
18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Mikrowellentechnik und Photonik (IMP)
Hinterlegungsdatum: 23 Okt 2019 06:01
Letzte Änderung: 24 Feb 2022 10:03
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