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Electrical Properties of Low-Temperature Processed Sn-Doped In2O3 Thin Films: The Role of Microstructure and Oxygen Content and the Potential of Defect Modulation Doping

Deyu, Getnet Kacha and Hunka, Jonas and Roussel, Hervé and Brötz, Joachim and Bellet, Daniel and Klein, Andreas (2019):
Electrical Properties of Low-Temperature Processed Sn-Doped In2O3 Thin Films: The Role of Microstructure and Oxygen Content and the Potential of Defect Modulation Doping.
In: Materials, 12 (14), p. 2232, ISSN 1996-1944,
DOI: 10.3390/ma12142232,
[Online-Edition: https://doi.org/10.3390/ma12142232],
[Article]

Item Type: Article
Erschienen: 2019
Creators: Deyu, Getnet Kacha and Hunka, Jonas and Roussel, Hervé and Brötz, Joachim and Bellet, Daniel and Klein, Andreas
Title: Electrical Properties of Low-Temperature Processed Sn-Doped In2O3 Thin Films: The Role of Microstructure and Oxygen Content and the Potential of Defect Modulation Doping
Language: English
Journal or Publication Title: Materials
Volume: 12
Number: 14
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Electronic Structure of Materials (ESM)
11 Department of Materials and Earth Sciences > Material Science > Structure Research
Date Deposited: 22 Jul 2019 05:49
DOI: 10.3390/ma12142232
Official URL: https://doi.org/10.3390/ma12142232
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