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New InGaAs THz Schottky Detectors with Nanowire Contact for Zero-Bias Operation

Hajo, A. S. and Yilmazoglu, O. and Küppers, F. (2018):
New InGaAs THz Schottky Detectors with Nanowire Contact for Zero-Bias Operation.
In: 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), ISSN 2162-2035,
DOI: 10.1109/IRMMW-THz.2018.8510152,
[Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2018
Creators: Hajo, A. S. and Yilmazoglu, O. and Küppers, F.
Title: New InGaAs THz Schottky Detectors with Nanowire Contact for Zero-Bias Operation
Language: English
Uncontrolled Keywords: gallium arsenide;III-V semiconductors;indium compounds;microwave diodes;nanowires;Schottky diodes;silver;terahertz wave detectors;wide band gap semiconductors;air-bridge contact;Schottky diodes;zero-bias operation;silver nanowire;vertically contacted high doped indium gallium arsenide;terahertz Schottky detectors;voltage 0.05 V;current 100 muA;InGaAs;Detectors;Schottky diodes;Indium gallium arsenide;Gallium arsenide;Capacitance;Antennas
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Photonics and Optical Communications
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
Event Title: 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Date Deposited: 21 Feb 2019 12:32
DOI: 10.1109/IRMMW-THz.2018.8510152
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