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A High-Efficiency GaN Transistor Module with Thick-Film BST-Based Tunable Matching Network

Preis, S. and Wiens, A. and Lia, E. and Heinrich, W. and Jakoby, R. and Maune, H. and Bengtsson, O. (2018):
A High-Efficiency GaN Transistor Module with Thick-Film BST-Based Tunable Matching Network.
In: 2018 48th European Microwave Conference (EuMC), DOI: 10.23919/EuMC.2018.8541808,
[Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2018
Creators: Preis, S. and Wiens, A. and Lia, E. and Heinrich, W. and Jakoby, R. and Maune, H. and Bengtsson, O.
Title: A High-Efficiency GaN Transistor Module with Thick-Film BST-Based Tunable Matching Network
Language: English
Uncontrolled Keywords: barium compounds;code division multiple access;gallium compounds;high electron mobility transistors;III-V semiconductors;Long Term Evolution;strontium compounds;UHF power amplifiers;varactors;wide band gap semiconductors;robust tunable devices;frequency agility;power amplifier;high-efficiency GaN transistor module;GaN HEMT;tunable matching network;thick-film BST;thick-film barium-strontium-titanate varactors package;LTE measurements;WCDMA measurements;temperature 20.0 degC to 80.0 degC;frequency 1.5 GHz to 2.45 GHz;GaN;(BaSr)TiO3;Varactors;Temperature measurement;Aluminum oxide;Substrates;Transistors;Thermal conductivity;Conductivity;Barium-Strontium-Titanate (BST);Ferroelectric films;Gallium nitride (GaN);HEMTs;Power amplifiers;Power transistors;Tunable circuits;Varactors
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Microwave Engineering
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
Event Title: 2018 48th European Microwave Conference (EuMC)
Date Deposited: 05 Feb 2019 13:10
DOI: 10.23919/EuMC.2018.8541808
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