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Characterization and Modeling of Epitaxially Grown BST on a Conducting Oxide Electrode

Walk, D. and Salg, P. and Kienemund, D. and Radetinac, A. and Zeinar, L. and Schuster, C. and Komissinskiy, P. and Alff, L. and Jakoby, R. and Maune, H. (2018):
Characterization and Modeling of Epitaxially Grown BST on a Conducting Oxide Electrode.
In: 2018 48th European Microwave Conference (EuMC), DOI: 10.23919/EuMC.2018.8541771,
[Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2018
Creators: Walk, D. and Salg, P. and Kienemund, D. and Radetinac, A. and Zeinar, L. and Schuster, C. and Komissinskiy, P. and Alff, L. and Jakoby, R. and Maune, H.
Title: Characterization and Modeling of Epitaxially Grown BST on a Conducting Oxide Electrode
Language: German
Uncontrolled Keywords: barium compounds;capacitance;dielectric thin films;epitaxial growth;epitaxial layers;leakage currents;paramagnetic resonance;permittivity;strontium compounds;varactors;Q factor;effective capacitance;leakage current;epitaxial growth;EM-model;conducting oxide;thin film BST50 varactor growth;ESR;permittivity;frequency 1.0 GHz;Ba0.5Sr0.5TiO3;Q-factor;Electrodes;Varactors;Capacitance;Q measurement;Permittivity measurement;Frequency measurement
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Microwave Engineering
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
Event Title: 2018 48th European Microwave Conference (EuMC)
Date Deposited: 06 Feb 2019 10:58
DOI: 10.23919/EuMC.2018.8541771
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