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Load Tuning Assisted Discrete-Level Supply Modulation Using BST and GaN Devices for Highly Efficient Power Amplifiers

Preis, S. and Wolff, N. and Lenze, F. and Wiens, A. and Jakoby, R. and Heinrich, W. and Bengtsson, O. (2018):
Load Tuning Assisted Discrete-Level Supply Modulation Using BST and GaN Devices for Highly Efficient Power Amplifiers.
In: 2018 IEEE/MTT-S International Microwave Symposium - IMS, ISSN 2576-7216, DOI: 10.1109/MWSYM.2018.8439135, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2018
Creators: Preis, S. and Wolff, N. and Lenze, F. and Wiens, A. and Jakoby, R. and Heinrich, W. and Bengtsson, O.
Title: Load Tuning Assisted Discrete-Level Supply Modulation Using BST and GaN Devices for Highly Efficient Power Amplifiers
Language: English
Uncontrolled Keywords: Modulation;Varactors;Tuning;Transistors;Gallium nitride;Peak to average power ratio;Power amplifiers;Gallium nitride;HEMTs;load modulation;power amplifiers;supply modulation;varactors
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics > Microwave Engineering
18 Department of Electrical Engineering and Information Technology > Institute for Microwave Engineering and Photonics
Event Title: 2018 IEEE/MTT-S International Microwave Symposium - IMS
Date Deposited: 06 Feb 2019 11:01
DOI: 10.1109/MWSYM.2018.8439135
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