Zhou, Y. and Yan, X. and Kroke, E. and Riedel, R. and Probst, D. and Thissen, A. and Hauser, R. and Ahles, M. and von Seggern, H. (2006):
Deposition Temperature Effect on the Structure and Optical Property of RF-PACVD-Derived Hydrogenated SiCNO Film.
In: Materialwissenschaft und Werkstofftechnik, 37 (2), pp. 173-177. Wiley-VCH Verlag GmbH, Weinheim, ISSN 0933-5137,
DOI: 10.1002/mawe.200600993,
[Article]
Abstract
Amorphous hydrogenated silicon oxocarbonitride (SiCNO:H) films have been deposited by plasma‐assisted chemical vapour deposition (PACVD) using bis(trimethylsilyl)carbodiimide (BTSC) as a single source precursor in a argon (Ar) radio‐frequency plasma. In this work the SiCNO:H films deposited at different deposition temperatures were studied in terms of deposition rate, refractive index, surface roughness, microstructure, and chemical composition including bonding state. The results showed that a higher deposition temperature enhanced the formation of Si‐N bonds, and disfavoured the formation of N=C=N, Si‐NCN, C‐H and Si‐CH3 bonds. A higher deposition temperature also decreased the deposition rate and increased the refractive index of the resulting SiCNO:H film. With increasing temperature a denser film was formed, indicating a change of the deposition mechanism, i.e., transformation from particle precipitation to heterogeneous surface reaction. Except for the coatings deposited at room temperature, the surface of the films was smooth with a roughness of around 4 nm at the centre in the range of 5 μm x 5 μm area. Moreover, the films contained 8 ∼ 16 at.% oxygen bonded to Si, which originated from the remnant H2O in the deposition chamber.
| Item Type: | Article |
|---|---|
| Erschienen: | 2006 |
| Creators: | Zhou, Y. and Yan, X. and Kroke, E. and Riedel, R. and Probst, D. and Thissen, A. and Hauser, R. and Ahles, M. and von Seggern, H. |
| Title: | Deposition Temperature Effect on the Structure and Optical Property of RF-PACVD-Derived Hydrogenated SiCNO Film |
| Language: | English |
| Abstract: | Amorphous hydrogenated silicon oxocarbonitride (SiCNO:H) films have been deposited by plasma‐assisted chemical vapour deposition (PACVD) using bis(trimethylsilyl)carbodiimide (BTSC) as a single source precursor in a argon (Ar) radio‐frequency plasma. In this work the SiCNO:H films deposited at different deposition temperatures were studied in terms of deposition rate, refractive index, surface roughness, microstructure, and chemical composition including bonding state. The results showed that a higher deposition temperature enhanced the formation of Si‐N bonds, and disfavoured the formation of N=C=N, Si‐NCN, C‐H and Si‐CH3 bonds. A higher deposition temperature also decreased the deposition rate and increased the refractive index of the resulting SiCNO:H film. With increasing temperature a denser film was formed, indicating a change of the deposition mechanism, i.e., transformation from particle precipitation to heterogeneous surface reaction. Except for the coatings deposited at room temperature, the surface of the films was smooth with a roughness of around 4 nm at the centre in the range of 5 μm x 5 μm area. Moreover, the films contained 8 ∼ 16 at.% oxygen bonded to Si, which originated from the remnant H2O in the deposition chamber. |
| Journal or Publication Title: | Materialwissenschaft und Werkstofftechnik |
| Journal volume: | 37 |
| Number: | 2 |
| Publisher: | Wiley-VCH Verlag GmbH, Weinheim |
| Uncontrolled Keywords: | Amorphous SiCNO:H, RF‐PACVD, Structure, Optical Properties, Amorphes Si‐CNO:H, RF‐PACVD, Struktur, optische Eigenschaften |
| Divisions: | 11 Department of Materials and Earth Sciences 11 Department of Materials and Earth Sciences > Material Science 11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids 11 Department of Materials and Earth Sciences > Material Science > Electronic Materials |
| Date Deposited: | 17 Dec 2018 13:01 |
| DOI: | 10.1002/mawe.200600993 |
| Official URL: | https://doi.org/10.1002/mawe.200600993 |
| Additional Information: | Dedicated to Dr. E. Broszeit on the occasion of his 65th birthday. |
| Funders: | This work woas funded by the DFG within the framework of DFG-SPP1119:“InorganicMaterialsbyGasPhaseDeposition: Interdisciplinary Approaches to Development, Understanding and Control of CVD-Techniques”. |
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