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Deposition Temperature Effect on the Structure and Optical Property of RF-PACVD-Derived Hydrogenated SiCNO Film

Zhou, Y. ; Yan, X. ; Kroke, E. ; Riedel, R. ; Probst, D. ; Thissen, A. ; Hauser, R. ; Ahles, M. ; Seggern, H. von (2006):
Deposition Temperature Effect on the Structure and Optical Property of RF-PACVD-Derived Hydrogenated SiCNO Film.
In: Materialwissenschaft und Werkstofftechnik, 37 (2), pp. 173-177. Wiley-VCH Verlag GmbH, Weinheim, ISSN 0933-5137,
DOI: 10.1002/mawe.200600993,
[Article]

Abstract

Amorphous hydrogenated silicon oxocarbonitride (SiCNO:H) films have been deposited by plasma‐assisted chemical vapour deposition (PACVD) using bis(trimethylsilyl)carbodiimide (BTSC) as a single source precursor in a argon (Ar) radio‐frequency plasma. In this work the SiCNO:H films deposited at different deposition temperatures were studied in terms of deposition rate, refractive index, surface roughness, microstructure, and chemical composition including bonding state. The results showed that a higher deposition temperature enhanced the formation of Si‐N bonds, and disfavoured the formation of N=C=N, Si‐NCN, C‐H and Si‐CH3 bonds. A higher deposition temperature also decreased the deposition rate and increased the refractive index of the resulting SiCNO:H film. With increasing temperature a denser film was formed, indicating a change of the deposition mechanism, i.e., transformation from particle precipitation to heterogeneous surface reaction. Except for the coatings deposited at room temperature, the surface of the films was smooth with a roughness of around 4 nm at the centre in the range of 5 μm x 5 μm area. Moreover, the films contained 8 ∼ 16 at.% oxygen bonded to Si, which originated from the remnant H2O in the deposition chamber.

Item Type: Article
Erschienen: 2006
Creators: Zhou, Y. ; Yan, X. ; Kroke, E. ; Riedel, R. ; Probst, D. ; Thissen, A. ; Hauser, R. ; Ahles, M. ; Seggern, H. von
Title: Deposition Temperature Effect on the Structure and Optical Property of RF-PACVD-Derived Hydrogenated SiCNO Film
Language: English
Abstract:

Amorphous hydrogenated silicon oxocarbonitride (SiCNO:H) films have been deposited by plasma‐assisted chemical vapour deposition (PACVD) using bis(trimethylsilyl)carbodiimide (BTSC) as a single source precursor in a argon (Ar) radio‐frequency plasma. In this work the SiCNO:H films deposited at different deposition temperatures were studied in terms of deposition rate, refractive index, surface roughness, microstructure, and chemical composition including bonding state. The results showed that a higher deposition temperature enhanced the formation of Si‐N bonds, and disfavoured the formation of N=C=N, Si‐NCN, C‐H and Si‐CH3 bonds. A higher deposition temperature also decreased the deposition rate and increased the refractive index of the resulting SiCNO:H film. With increasing temperature a denser film was formed, indicating a change of the deposition mechanism, i.e., transformation from particle precipitation to heterogeneous surface reaction. Except for the coatings deposited at room temperature, the surface of the films was smooth with a roughness of around 4 nm at the centre in the range of 5 μm x 5 μm area. Moreover, the films contained 8 ∼ 16 at.% oxygen bonded to Si, which originated from the remnant H2O in the deposition chamber.

Journal or Publication Title: Materialwissenschaft und Werkstofftechnik
Journal volume: 37
Number: 2
Publisher: Wiley-VCH Verlag GmbH, Weinheim
Uncontrolled Keywords: Amorphous SiCNO:H, RF‐PACVD, Structure, Optical Properties, Amorphes Si‐CNO:H, RF‐PACVD, Struktur, optische Eigenschaften
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids
11 Department of Materials and Earth Sciences > Material Science > Electronic Materials
Date Deposited: 17 Dec 2018 13:01
DOI: 10.1002/mawe.200600993
Official URL: https://doi.org/10.1002/mawe.200600993
Additional Information:

Dedicated to Dr. E. Broszeit on the occasion of his 65th birthday.

Funders: This work woas funded by the DFG within the framework of DFG-SPP1119:“InorganicMaterialsbyGasPhaseDeposition: Interdisciplinary Approaches to Development, Understanding and Control of CVD-Techniques”.
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