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High-Pressure Synthesis of a Gallium Oxonitride with a Spinel-Type Structure

Kinski, Isabel ; Miehe, Gerhard ; Heymann, Gunter ; Theissmann, Ralf ; Riedel, Ralf ; Huppertz, Hubert (2005)
High-Pressure Synthesis of a Gallium Oxonitride with a Spinel-Type Structure.
In: Zeitschrift für Naturforschung B, 60 (8)
doi: 10.1515/znb-2005-0803
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

The new compound Ga2.81O3.57N0.43 was crystallized under high-pressure / high-temperature conditions in a spinel-type structure from a prestructured gallium oxonitride ceramic, which was obtained from the single-source molecular precursor [Ga(OtBu)2NMe2]2 by thermal treatment in an ammonia atmosphere. The optimized precursor-derived gallium oxonitride ceramic remains nanocrystalline up to 600 °C and can be transformed at 7 GPa and 1100 °C into the crystalline phase Ga2.81O3.57N0.43. The structure, homogeneity, and nitrogen to oxygen ratio were determined using TEM coupled with an electron energy loss spectrometer (EELS) and an energy dispersive X-ray (EDX) spectrometer. For phase analysis and structure confirmation, X-ray powder diffraction data were measured.

Typ des Eintrags: Artikel
Erschienen: 2005
Autor(en): Kinski, Isabel ; Miehe, Gerhard ; Heymann, Gunter ; Theissmann, Ralf ; Riedel, Ralf ; Huppertz, Hubert
Art des Eintrags: Bibliographie
Titel: High-Pressure Synthesis of a Gallium Oxonitride with a Spinel-Type Structure
Sprache: Englisch
Publikationsjahr: 1 August 2005
Verlag: de Gruyter
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Zeitschrift für Naturforschung B
Jahrgang/Volume einer Zeitschrift: 60
(Heft-)Nummer: 8
DOI: 10.1515/znb-2005-0803
URL / URN: https://doi.org/10.1515/znb-2005-0803
Kurzbeschreibung (Abstract):

The new compound Ga2.81O3.57N0.43 was crystallized under high-pressure / high-temperature conditions in a spinel-type structure from a prestructured gallium oxonitride ceramic, which was obtained from the single-source molecular precursor [Ga(OtBu)2NMe2]2 by thermal treatment in an ammonia atmosphere. The optimized precursor-derived gallium oxonitride ceramic remains nanocrystalline up to 600 °C and can be transformed at 7 GPa and 1100 °C into the crystalline phase Ga2.81O3.57N0.43. The structure, homogeneity, and nitrogen to oxygen ratio were determined using TEM coupled with an electron energy loss spectrometer (EELS) and an energy dispersive X-ray (EDX) spectrometer. For phase analysis and structure confirmation, X-ray powder diffraction data were measured.

Freie Schlagworte: High-Pressure, Gallium Oxonitride, Spinel Structure Type
Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Disperse Feststoffe
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Strukturforschung
Hinterlegungsdatum: 17 Dez 2018 12:04
Letzte Änderung: 17 Dez 2018 12:04
PPN:
Sponsoren: We gratefully acknowledge the continuous support of these investigations by Prof. Dr. W. Schnick, Department Chemie und Biochemie of the Ludwig-Maximilians-Universität München (Germany).
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