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Potential gallium oxynitrides with a derived spinel structure

Lowther, T. and Kinski, Isabel and Wagner, T. and Riedel, Ralf (2004):
Potential gallium oxynitrides with a derived spinel structure.
In: Journal of Alloys and Compounds, Elsevier Science Publishing, pp. 1-4, 376, (1-2), ISSN 09258388, DOI: 10.1016/j.jallcom.2003.09.125, [Online-Edition: https://doi.org/10.1016/j.jallcom.2003.09.125],
[Article]

Abstract

The structural and electronic properties of a spinel structure of Ga3NO3 are investigated. Comparison is made with zinc-blende and wurtzite GaN as well as with β-Ga2O3, all of which are important direct gap materials. It is suggested that spinel Ga3NO3 may be formed through an alloyed mixture of GaN and Ga2O3. Ga3NO3 is also predicted to be a direct gap material with a value lying close to its nitride counterparts. The calculated lattice constant of the spinel Ga3NO3 is in excellent agreement with the structure of a recently synthesized cubic gallium oxynitride phase with an identified elemental composition near Ga2.8N0.5O3.5.

Item Type: Article
Erschienen: 2004
Creators: Lowther, T. and Kinski, Isabel and Wagner, T. and Riedel, Ralf
Title: Potential gallium oxynitrides with a derived spinel structure
Language: English
Abstract:

The structural and electronic properties of a spinel structure of Ga3NO3 are investigated. Comparison is made with zinc-blende and wurtzite GaN as well as with β-Ga2O3, all of which are important direct gap materials. It is suggested that spinel Ga3NO3 may be formed through an alloyed mixture of GaN and Ga2O3. Ga3NO3 is also predicted to be a direct gap material with a value lying close to its nitride counterparts. The calculated lattice constant of the spinel Ga3NO3 is in excellent agreement with the structure of a recently synthesized cubic gallium oxynitride phase with an identified elemental composition near Ga2.8N0.5O3.5.

Journal or Publication Title: Journal of Alloys and Compounds
Volume: 376
Number: 1-2
Publisher: Elsevier Science Publishing
Uncontrolled Keywords: Oxide materials, Semiconductors, Crystal structure, Electronic structure
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids
Date Deposited: 17 Dec 2018 11:49
DOI: 10.1016/j.jallcom.2003.09.125
Official URL: https://doi.org/10.1016/j.jallcom.2003.09.125
Funders: This work has, in part, been funded through a German-NRF (South Africa) co-operative exchange program.
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