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Response of Gallium Nitride Chemiresistors to Carbon Monoxide is Due to Oxygen Contamination

Prasad, Ravi Mohan and Lauterbach, Stefan and Kleebe, Hans-Joachim and Merdrignac-Conanec, Odile and Barsan, Nicolae and Weimar, Udo and Gurlo, Aleksander (2017):
Response of Gallium Nitride Chemiresistors to Carbon Monoxide is Due to Oxygen Contamination.
In: ACS Sensors, American Chemical Society, Washington, USA, pp. 713-717, 2, (6), DOI: 10.1021/acssensors.7b00064,
[Online-Edition: https://pubs.acs.org/doi/10.1021/acssensors.7b00064],
[Article]

Abstract

We report on the influence of oxygen impurities on the gas sensing properties of gallium nitride (GaN) chemiresistors. As shown by XRD, elemental analysis, and TEM characterization, surface oxidation of GaN for example, upon contact to ambient air atmosphere creates an oxidative amorphous layer which provides the sites for the sensing toward CO. Treating this powder under dry ammonia at 800 degrees C converts the oxide layer in nitride, and consequently the sensing performance toward CO is dramatically reduced for ammonia treated GaN gas sensors. Hence the response of GaN sensors to CO is caused by oxygen in the form of amorphous surface oxide or oxynitride.

Item Type: Article
Erschienen: 2017
Creators: Prasad, Ravi Mohan and Lauterbach, Stefan and Kleebe, Hans-Joachim and Merdrignac-Conanec, Odile and Barsan, Nicolae and Weimar, Udo and Gurlo, Aleksander
Title: Response of Gallium Nitride Chemiresistors to Carbon Monoxide is Due to Oxygen Contamination
Language: English
Abstract:

We report on the influence of oxygen impurities on the gas sensing properties of gallium nitride (GaN) chemiresistors. As shown by XRD, elemental analysis, and TEM characterization, surface oxidation of GaN for example, upon contact to ambient air atmosphere creates an oxidative amorphous layer which provides the sites for the sensing toward CO. Treating this powder under dry ammonia at 800 degrees C converts the oxide layer in nitride, and consequently the sensing performance toward CO is dramatically reduced for ammonia treated GaN gas sensors. Hence the response of GaN sensors to CO is caused by oxygen in the form of amorphous surface oxide or oxynitride.

Journal or Publication Title: ACS Sensors
Volume: 2
Number: 6
Publisher: American Chemical Society, Washington, USA
Uncontrolled Keywords: chemiresistors; gallium nitride; carbon monoxide; oxygen; gallium oxide GAS SENSORS; IN-SITU; FILMS; POWDERS
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Earth Science
11 Department of Materials and Earth Sciences > Earth Science > Geo-Material-Science
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids
Date Deposited: 22 Aug 2018 09:39
DOI: 10.1021/acssensors.7b00064
Official URL: https://pubs.acs.org/doi/10.1021/acssensors.7b00064
Funders: priority program "Adapting surfaces for high temperature applications" of German Research Foundation (DFG): Gu 992/3-2, SPP 1299
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