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Ammonia sensors based on in situ fabricated nanocrystalline graphene field-effect devices

Noll, D. and Schwalke, U. :
Ammonia sensors based on in situ fabricated nanocrystalline graphene field-effect devices.
[Online-Edition: https://doi.org/10.1109/DTIS.2018.8368566]
13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)
[Conference or Workshop Item] , (2018)

Official URL: https://doi.org/10.1109/DTIS.2018.8368566

Abstract

By transfer-free in situ catalytic chemical vapor deposition (CCVD) hundreds of nanocrystalline graphene field-effect transistors (ncGFETs) have been fabricated on a single 2″ silicon substrate. Raman spectroscopic analysis of the grown nanocrystalline graphene shows a clear signature of the G and a weak 2D peak in accoordance with the Raman spectra of nanocrystalline graphene from Schmidt et al. [1]. Using a grounded backgate ncGFET, the detection of ammonia (NH3) is demonstrated for room temperature (300 K) and 425 K, achieving detection down to a volume concentration of 100 parts-per-billion-volume (ppbv). By this method, a sensitivity of S4ppm, 425 k = 80.6% can be found for a volume concentration of 4 parts-per-million-volume (ppmv) of NH3 at a temperature of 425 K. In addition, by evaluation of the input characteristics of our ncGFET under different volume concentrations of ammonia we observe a global increase in the conductivity, which influences the sensitivity of our devices as well as of the negative shift of the charge neutrality point.

Item Type: Conference or Workshop Item
Erschienen: 2018
Creators: Noll, D. and Schwalke, U.
Title: Ammonia sensors based on in situ fabricated nanocrystalline graphene field-effect devices
Language: English
Abstract:

By transfer-free in situ catalytic chemical vapor deposition (CCVD) hundreds of nanocrystalline graphene field-effect transistors (ncGFETs) have been fabricated on a single 2″ silicon substrate. Raman spectroscopic analysis of the grown nanocrystalline graphene shows a clear signature of the G and a weak 2D peak in accoordance with the Raman spectra of nanocrystalline graphene from Schmidt et al. [1]. Using a grounded backgate ncGFET, the detection of ammonia (NH3) is demonstrated for room temperature (300 K) and 425 K, achieving detection down to a volume concentration of 100 parts-per-billion-volume (ppbv). By this method, a sensitivity of S4ppm, 425 k = 80.6% can be found for a volume concentration of 4 parts-per-million-volume (ppmv) of NH3 at a temperature of 425 K. In addition, by evaluation of the input characteristics of our ncGFET under different volume concentrations of ammonia we observe a global increase in the conductivity, which influences the sensitivity of our devices as well as of the negative shift of the charge neutrality point.

Title of Book: 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Location: Taormina, Sizilien
Event Dates: 9-12 April 2018
Date Deposited: 07 Jun 2018 14:19
DOI: 10.1109/DTIS.2018.8368566
Official URL: https://doi.org/10.1109/DTIS.2018.8368566
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